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| Ordering number : ENA0629 2SC3807MP SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP Applications * 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Low-frequency general-purpose amplifiers, drivers. Features * * * * * Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)0.5V). High VEBO(VEBO15V). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 30 25 17 2 4 1.1 150 --55 to +150 Unit V V V A A W C C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42507LA TI IM TC-00000660 No. A0629-1/4 2SC3807MP Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=20V, IE=0A VEB=10V, IC=0A VCE=5V, IC=500mA VCE=5V, IC=1A VCE=10V, IC=50mA VCB=10V, f=1MHz IC=1A, IB=20mA IC=1A, IB=20mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 30 25 17 0.14 0.8 0.1 1000 600 260 24 0.135 0.85 0.5 1.2 MHz pF V V V V V s s s Ratings min typ max 0.1 0.1 2000 Unit A A Package Dimensions unit : mm (typ) 7520-002 6.0 5.0 4.7 Switching Time Test Circuit PW=20s D.C.1% INPUT VR IB1 IB2 RB OUTPUT RL 8.5 50 + 100F + 470F VCC=10V 1.0 0.5 0.6 0.5 3.0 0.5 --5V 14.0 7IB1= --7IB2=IC=700mA 123 1 : Emitter 2 : Collector 3 : Base 1.45 1.45 SANYO : MP 2.0 IC -- VCE A .0m 10 7. 0m A A mA A 5.0 4.0m 3.0m 2.0 IC -- VBE VCE=5V 1.8 2.0mA Collector Current, IC -- A 1.8 1.6 1.4 1.2 1.0 Collector Current, IC -- A 20.0mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 6.0 mA 1.0mA 5C 25C 0.6 0.4 0.2 IB=0mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT11143 Collector-to-Emitter Voltage, VCE -- V IT11142 Base-to-Emitter Voltage, VBE -- V Ta= 7 0.5mA 0.8 --25C No. A0629-2/4 2SC3807MP 5 hFE -- IC VCE=5V 7 f T -- IC VCE=10V 3 Gain-Bandwidth Product, f T -- MHz 3 5 7 1.0 2 3 5 3 2 DC Current Gain, hFE 2 Ta=75C 25C 100 7 5 --25C 1000 7 3 2 0.01 5 0.01 2 3 5 7 0.1 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 100 IT11144 7 Collector Current, IC -- A IT11145 Cob -- VCB f=1MHz VCE(sat) -- IC 5 IC / IB=50 Output Capacitance, Cob -- pF 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 5 0.1 7 5 3 2 3 = Ta 75 C C 5 --2 2 C 25 0.01 7 5 0.01 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector-to-Base Voltage, VCB -- V 3 IT11146 7 5 3 2 VBE(sat) -- IC Collector Current, IC -- A IT11147 ASO IC / IB=50 ICP=4A IC=2A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 10 DC Collector Current, IC -- A 10 m 0m s s 1m s 1.0 1.0 7 5 3 2 0.1 7 5 3 2 op Ta= --25C 7 5 era tio n 25C 75C 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.1 Ta=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- A 1.4 IT11148 PC -- Ta Collector-to-Emitter Voltage, VCE -- V IT11925 1.2 Collector Dissipation, PC -- W 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT11926 No. A0629-3/4 2SC3807MP SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice. PS No. A0629-4/4 |
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